RFP8P06LE vs RFP40N10LE feature comparison

RFP8P06LE Intersil Corporation

Buy Now Datasheet

RFP40N10LE Rochester Electronics LLC

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERSIL CORP ROCHESTER ELECTRONICS LLC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Additional Feature MEGAFET, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 100 V
Drain Current-Max (ID) 8 A 40 A
Drain-source On Resistance-Max 0.33 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 4
Pbfree Code Yes
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare RFP8P06LE with alternatives

Compare RFP40N10LE with alternatives