RFP4N05
vs
RFP8P05
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
50 V
Drain Current-Max (ID)
4 A
8 A
Drain-source On Resistance-Max
0.8 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
20 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Rohs Code
HTS Code
8541.29.00.95
Additional Feature
MEGAFET
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Power Dissipation Ambient-Max
48 W
Power Dissipation-Max (Abs)
40 W
Terminal Finish
TIN LEAD
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
60 ns
Compare RFP4N05 with alternatives
Compare RFP8P05 with alternatives