RFP3N50
vs
IRF821-001
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
500 V
450 V
Drain Current-Max (ID)
3 A
2.5 A
Drain-source On Resistance-Max
3 Ω
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
100 pF
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
R-PSFM-T3
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
60 W
Power Dissipation-Max (Abs)
60 W
Pulsed Drain Current-Max (IDM)
5 A
8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
MATTE TIN OVER NICKEL
Terminal Form
PIN/PEG
THROUGH-HOLE
Terminal Position
BOTTOM
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
210 ns
Turn-on Time-Max (ton)
105 ns
Base Number Matches
4
2
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