RFD7N10LE vs IRLU120N feature comparison

RFD7N10LE Harris Semiconductor

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IRLU120NPBF International Rectifier

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR INTERNATIONAL RECTIFIER CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature MEGAFET, LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 7 A 10 A
Drain-source On Resistance-Max 0.3 Ω 0.225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA TO-251AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 47 W
Power Dissipation-Max (Abs) 47 W 48 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 110 ns
Base Number Matches 3 1
Pbfree Code Yes
Part Package Code TO-251AA
Package Description LEAD FREE, PLASTIC, IPAK-3
Pin Count 3
Avalanche Energy Rating (Eas) 85 mJ
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 35 A
Time@Peak Reflow Temperature-Max (s) 30

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