IRLU120N vs RFP7N10LE feature comparison

IRLU120N Infineon Technologies AG

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RFP7N10LE Harris Semiconductor

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Rohs Code No
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Package Description IPAK-3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED MEGAFET, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 10 A 7 A
Drain-source On Resistance-Max 0.225 Ω 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA TO-220AB
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 35 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 47 W
Power Dissipation-Max (Abs) 47 W
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 110 ns

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