RFD14N06LSM9A
vs
RFD14N06LSM
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERSIL CORP
HARRIS SEMICONDUCTOR
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.1 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
40 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
3
Package Description
SMALL OUTLINE, R-PSSO-G2
HTS Code
8541.29.00.95
Power Dissipation Ambient-Max
48 W
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
60 ns
Compare RFD14N06LSM9A with alternatives
Compare RFD14N06LSM with alternatives