RFD14N06LSM9A
vs
RF1S640SM
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERSIL CORP
HARRIS SEMICONDUCTOR
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
200 V
Drain Current-Max (ID)
14 A
18 A
Drain-source On Resistance-Max
0.1 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
125 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
4
Avalanche Energy Rating (Eas)
580 mJ
Pulsed Drain Current-Max (IDM)
72 A
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