RFD14N06LSM9A vs RF1S640SM feature comparison

RFD14N06LSM9A Intersil Corporation

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RF1S640SM Harris Semiconductor

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No No
Transferred Transferred
INTERSIL CORP HARRIS SEMICONDUCTOR
not_compliant unknown
EAR99 EAR99
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
DRAIN DRAIN
SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
60 V 200 V
14 A 18 A
0.1 Ω 0.18 Ω
METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
TO-252AA TO-263AB
R-PSSO-G2 R-PSSO-G2
e0 e0
1 1
2 2
ENHANCEMENT MODE ENHANCEMENT MODE
175 °C 150 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
SMALL OUTLINE SMALL OUTLINE
N-CHANNEL N-CHANNEL
40 W 125 W
Not Qualified Not Qualified
YES YES
Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
GULL WING GULL WING
SINGLE SINGLE
SWITCHING SWITCHING
SILICON SILICON
3 4
580 mJ
72 A

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