RFD12N06RLE
vs
RFD12N06RLE
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERSIL CORP
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
MEGAFET, LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
12 A
18 A
Drain-source On Resistance-Max
0.16 Ω
0.063 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
TO-251AA
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
40 W
Power Dissipation-Max (Abs)
40 W
Pulsed Drain Current-Max (IDM)
26 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
60 ns
Turn-on Time-Max (ton)
60 ns
Base Number Matches
4
3
Pbfree Code
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare RFD12N06RLE with alternatives