RF1S9630SM
vs
IRFR9214TRPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
HARRIS SEMICONDUCTOR
VISHAY SILICONIX
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
250 V
Drain Current-Max (ID)
6.5 A
2.7 A
Drain-source On Resistance-Max
0.8 Ω
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-252
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
75 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
3
Part Package Code
TO-252
Package Description
ROHS COMPLIANT, DPAK-3
Pin Count
3
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
100 mJ
Case Connection
DRAIN
Pulsed Drain Current-Max (IDM)
11 A
Transistor Application
SWITCHING
Compare RF1S9630SM with alternatives
Compare IRFR9214TRPBF with alternatives