RF1K4922396 vs HUF76113DK8T feature comparison

RF1K4922396 Harris Semiconductor

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HUF76113DK8T Fairchild Semiconductor Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PDSO-G8 PLASTIC, SO-8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 2.5 A 6 A
Drain-source On Resistance-Max 0.36 Ω 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOIC
Pin Count 8
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 2.5 W
Terminal Finish MATTE TIN

Compare RF1K4922396 with alternatives

Compare HUF76113DK8T with alternatives