PHN210
vs
PHN210T
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
PHILIPS SEMICONDUCTORS
Part Package Code
SOIC
Package Description
PLASTIC, SO-8
Pin Count
8
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
13 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3.4 A
3.4 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e4
e4
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
4 W
Power Dissipation-Max (Abs)
2 W
1.3 W
Pulsed Drain Current-Max (IDM)
14 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
NICKEL PALLADIUM GOLD
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
140 ns
Turn-on Time-Max (ton)
40 ns
Base Number Matches
3
3
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