QS8886-25PB
vs
QS8885-25DB
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
QUALITY SEMICONDUCTOR INC
QUALITY SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Access Time-Max
25 ns
25 ns
JESD-30 Code
R-PDIP-T24
R-GDIP-T24
Memory Density
65536 bit
65536 bit
Memory IC Type
CACHE TAG SRAM
CACHE TAG SRAM
Memory Width
4
4
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
24
24
Number of Words
16384 words
16384 words
Number of Words Code
16000
16000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
16KX4
16KX4
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
PLASTIC/EPOXY
CERAMIC, GLASS-SEALED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
I/O Type
COMMON
JESD-609 Code
e0
Package Equivalence Code
DIP24,.3
Screening Level
38535Q/M;38534H;883B
Standby Current-Max
0.02 A
Standby Voltage-Min
4.5 V
Supply Current-Max
0.13 mA
Terminal Finish
TIN LEAD
Terminal Pitch
2.54 mm
Compare QS8886-25PB with alternatives
Compare QS8885-25DB with alternatives