QS86446-15LRB
vs
PDM41258LA15D
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
QUALITY SEMICONDUCTOR INC
PARADIGM TECHNOLOGY INC
Reach Compliance Code
unknown
unknown
Access Time-Max
15 ns
15 ns
JESD-30 Code
R-CQCC-N28
R-GDIP-T24
Memory Density
262144 bit
262144 bit
Memory IC Type
CACHE TAG SRAM
STANDARD SRAM
Memory Width
4
4
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
28
24
Number of Words
65536 words
65536 words
Number of Words Code
64000
64000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
70 °C
Operating Temperature-Min
-55 °C
Organization
64KX4
64KX4
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
NO
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, GLASS-SEALED
Package Code
QCCN
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
YES
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
COMMERCIAL
Terminal Form
NO LEAD
THROUGH-HOLE
Terminal Position
QUAD
DUAL
Base Number Matches
1
1
Pbfree Code
Rohs Code
Package Description
DIP, DIP24,.3
ECCN Code
EAR99
HTS Code
8542.32.00.41
I/O Type
COMMON
JESD-609 Code
e0
Package Equivalence Code
DIP24,.3
Standby Current-Max
0.0005 A
Standby Voltage-Min
2 V
Supply Current-Max
0.15 mA
Terminal Finish
TIN LEAD
Terminal Pitch
2.54 mm
Compare QS86446-15LRB with alternatives
Compare PDM41258LA15D with alternatives