PUMD24/T2
vs
MUN5313DW1T1G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEXPERIA
ONSEMI
Package Description
SMALL OUTLINE, R-PDSO-G6
SC-88, SC-70, 6 PIN
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Additional Feature
BUILT IN BIAS RESISTOR RATIO 1
BUILT-IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC)
0.02 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
80
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
6
6
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
NPN AND PNP
NPN AND PNP
Surface Mount
YES
YES
Terminal Finish
TIN
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Yes
Part Package Code
SC-88/SC70-6/SOT-363 6 LEAD
Pin Count
6
Manufacturer Package Code
419B-02
Factory Lead Time
10 Weeks
Samacsys Manufacturer
onsemi
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
0.385 W
Qualification Status
Not Qualified
Compare PUMD24/T2 with alternatives
Compare MUN5313DW1T1G with alternatives