MUN5313DW1T1G
vs
RN4983
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
ONSEMI
TOSHIBA CORP
Part Package Code
SC-88/SC70-6/SOT-363 6 LEAD
Package Description
SC-88, SC-70, 6 PIN
2-2J1A, 6 PIN
Pin Count
6
6
Manufacturer Package Code
419B-02
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
10 Weeks
Samacsys Manufacturer
onsemi
Toshiba
Additional Feature
BUILT-IN BIAS RESISTOR RATIO 1
BUILT-IN BIAS RESISITOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
70
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
6
6
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
NPN AND PNP
NPN AND PNP
Power Dissipation-Max (Abs)
0.385 W
0.2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Collector-Base Capacitance-Max
6 pF
Transition Frequency-Nom (fT)
250 MHz
VCEsat-Max
0.3 V
Compare MUN5313DW1T1G with alternatives
Compare RN4983 with alternatives