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PUMD2,125 vs PUMD2,115 feature comparison

PUMD2,125 Nexperia

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PUMD2,115 Nexperia

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Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA NEXPERIA
Part Package Code TSSOP TSSOP
Package Description SMALL OUTLINE, R-PDSO-G6 SC-88, 6 PIN
Pin Count 6 6
Manufacturer Package Code SOT363 SOT363
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Nexperia Nexperia
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 60 60
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN AND PNP NPN AND PNP
Reference Standard IEC-60134 IEC-60134
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Date Of Intro 1997-09-01
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

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