PTVS16VP1UP vs VS15VUA1LAMTR feature comparison

PTVS16VP1UP NXP Semiconductors

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VS15VUA1LAMTR ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS ROHM CO LTD
Package Description R-PDSO-F2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 19.7 V 18.5 V
Breakdown Voltage-Min 17.8 V 16.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321 IEC-61000-4-2
Rep Pk Reverse Voltage-Max 16 V 15 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 1
Date Of Intro 2017-12-20
Samacsys Manufacturer ROHM Semiconductor
Additional Feature HIGH RELIABILITY

Compare PTVS16VP1UP with alternatives

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