VS15VUA1LAMTR vs SMA6J14A-Q feature comparison

VS15VUA1LAMTR ROHM Semiconductor

Buy Now Datasheet

SMA6J14A-Q Bourns Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD BOURNS INC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2017-12-20 2019-10-02
Samacsys Manufacturer ROHM Semiconductor Bourns
Additional Feature HIGH RELIABILITY PRSM-MIN
Breakdown Voltage-Max 18.5 V 17.2 V
Breakdown Voltage-Min 16.7 V 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2 AEC-Q101
Rep Pk Reverse Voltage-Max 15 V 14 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Factory Lead Time 16 Weeks
Breakdown Voltage-Nom 16.4 V
JEDEC-95 Code DO-214AC
Operating Temperature-Min -55 °C
Reverse Current-Max 1 µA
Reverse Test Voltage 14 V

Compare VS15VUA1LAMTR with alternatives

Compare SMA6J14A-Q with alternatives