PSMN070-200B
vs
IRFS31N20D
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
INFINEON TECHNOLOGIES AG
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE
Drain Current-Max (ID)
33 A
31 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Peak Reflow Temperature (Cel)
245
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Base Number Matches
3
1
Package Description
D2PAK-3/2
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
420 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
200 V
Drain-source On Resistance-Max
0.082 Ω
JESD-30 Code
R-PSSO-G2
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Pulsed Drain Current-Max (IDM)
124 A
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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