PN5415-AMMO vs PN5416 feature comparison

PN5415-AMMO NXP Semiconductors

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PN5416 North American Philips Discrete Products Div

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Package Description CYLINDRICAL, O-PBCY-T3 ,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.5 A 1 A
Collector-Base Capacitance-Max 15 pF
Collector-Emitter Voltage-Max 200 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 15 MHz 15 MHz
VCEsat-Max 0.8 V
Base Number Matches 1 3
Rohs Code No
JESD-609 Code e0
Power Dissipation-Max (Abs) 0.625 W
Terminal Finish Tin/Lead (Sn/Pb)

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