PMV117EN
vs
TN0104N3-G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SUPERTEX INC
|
Part Package Code |
SOT-23
|
TO-92
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
40 V
|
Drain Current-Max (ID) |
2.5 A
|
0.45 A
|
Drain-source On Resistance-Max |
0.19 Ω
|
1.8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-236AB
|
TO-92
|
JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
260
|
250
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.83 W
|
1 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
Tin (Sn)
|
MATTE TIN
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
LOW THRESHOLD
|
Feedback Cap-Max (Crss) |
|
15 pF
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation Ambient-Max |
|
1 W
|
|
|
|
Compare PMV117EN with alternatives
Compare TN0104N3-G with alternatives