PMBD353
vs
MMBD353LT1G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
ONSEMI
|
| Part Package Code |
SOT-23
|
SOT-23 (TO-236) 3 LEAD
|
| Package Description |
PLASTIC, SMD, 3 PIN
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.60
|
8541.10.00.60
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
| Diode Capacitance-Max |
1 pF
|
1 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
MIXER DIODE
|
MIXER DIODE
|
| Forward Voltage-Max (VF) |
0.6 V
|
|
| Frequency Band |
ULTRA HIGH FREQUENCY
|
ULTRA HIGH FREQUENCY
|
| JEDEC-95 Code |
TO-236AB
|
TO-236AB
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
100 °C
|
150 °C
|
| Output Current-Max |
0.03 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
4 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
|
| Terminal Finish |
Tin (Sn)
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
9
|
2
|
| Manufacturer Package Code |
|
318-08
|
| Factory Lead Time |
|
11 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max |
|
0.225 W
|
|
|
|
Compare PMBD353 with alternatives
Compare MMBD353LT1G with alternatives