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PHP153NQ08LT,127 vs IRFZ34VSTRRPBF feature comparison

PHP153NQ08LT,127 NXP Semiconductors

Buy Now Datasheet

IRFZ34VSTRRPBF Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 560 mJ 81 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V 60 V
Drain Current-Max (ID) 75 A 30 A
Drain-source On Resistance-Max 0.0066 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 300 W 70 W
Pulsed Drain Current-Max (IDM) 240 A 120 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish MATTE TIN OVER NICKEL
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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Compare IRFZ34VSTRRPBF with alternatives