PEMB10,115 vs PEMB10,115 feature comparison

PEMB10,115 Nexperia

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PEMB10,115 NXP Semiconductors

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Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Part Package Code SOT SOT
Package Description SMALL OUTLINE, R-PDSO-F6 PLASTIC PACKAGE-6
Pin Count 6 6
Manufacturer Package Code SOT666 SOT666
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Nexperia
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 21 BUILT IN BIAS RESISTOR RATIO IS 21
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 100
JESD-30 Code R-PDSO-F6 R-PDSO-F6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Power Dissipation-Max (Abs) 0.3 W

Compare PEMB10,115 with alternatives

Compare PEMB10,115 with alternatives