PDTC143EE,115 vs RN1101 feature comparison

PDTC143EE,115 NXP Semiconductors

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RN1101 Toshiba America Electronic Components

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code SC-75
Package Description PLASTIC, EMT3, SMD, SC-75, SMPAK-3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code SOT416
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Factory Lead Time 4 Weeks
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 2 1
Pbfree Code No
Samacsys Manufacturer Toshiba

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