PDTC123JT-Q
vs
PDTC123JT,215
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Peak Reflow Temperature (Cel)
260
260
Terminal Finish
TIN
TIN
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
2
Part Package Code
TO-236
Package Description
PLASTIC, SST3, SMD, 3 PIN
Pin Count
3
Manufacturer Package Code
SOT23
HTS Code
8541.21.00.95
Samacsys Manufacturer
NXP
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 21.36
Collector Current-Max (IC)
0.1 A
Collector-Base Capacitance-Max
3.5 pF
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
100
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
0.25 W
Power Dissipation-Max (Abs)
0.25 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
VCEsat-Max
0.3 V
Compare PDTC123JT-Q with alternatives
Compare PDTC123JT,215 with alternatives