PDTC123JM,315
vs
PDTC123JM
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
Part Package Code |
DFN
|
|
Package Description |
1.0 X 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN
|
CHIP CARRIER, R-PBCC-N3
|
Pin Count |
3
|
|
Manufacturer Package Code |
SOT883
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 21.36
|
BUILT IN BIAS RESISTANCE RATIO IS 21
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
50 V
|
50 V
|
Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
100
|
100
|
JESD-30 Code |
R-PBCC-N3
|
R-PBCC-N3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation-Max (Abs) |
0.25 W
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
TIN
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
4
|
Date Of Intro |
|
1999-05-18
|
Samacsys Manufacturer |
|
Nexperia
|
|
|
|
Compare PDTC123JM,315 with alternatives
Compare PDTC123JM with alternatives