P6SMBJ5.0AT/R13 vs P6SMBJ5.0A_R1_10001 feature comparison

P6SMBJ5.0AT/R13 PanJit Semiconductor

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P6SMBJ5.0A_R1_10001 PanJit Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 7.25 V 7.25 V
Breakdown Voltage-Min 6.4 V 6.4 V
Breakdown Voltage-Nom 6.8 V 6.825 V
Clamping Voltage-Max 9.2 V 9.2 V
Configuration SINGLE SINGLE
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 5 V 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Diode Element Material SILICON
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard UL RECOGNIZED
Reverse Current-Max 800 µA
Reverse Test Voltage 5 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare P6SMBJ5.0AT/R13 with alternatives

Compare P6SMBJ5.0A_R1_10001 with alternatives