P6SMBJ33A_R1_10001 vs P6SMBJ33T/R7 feature comparison

P6SMBJ33A_R1_10001 PanJit Semiconductor

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P6SMBJ33T/R7 PanJit Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 42.2 V 46.5 V
Breakdown Voltage-Min 36.7 V 36.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 2
Breakdown Voltage-Nom 41.6 V
Clamping Voltage-Max 59 V

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Compare P6SMBJ33T/R7 with alternatives