P6SMBJ33A_R1_10001 vs P6SMBJ33-AU_R2_000A1 feature comparison

P6SMBJ33A_R1_10001 PanJit Semiconductor

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P6SMBJ33-AU_R2_000A1 PanJit Semiconductor

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 42.2 V 46.5 V
Breakdown Voltage-Min 36.7 V 36.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Breakdown Voltage-Nom 41.6 V
Clamping Voltage-Max 59 V

Compare P6SMBJ33A_R1_10001 with alternatives

Compare P6SMBJ33-AU_R2_000A1 with alternatives