P6SMB91CA
vs
JAN1N6461
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
MICROSS COMPONENTS
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
Taiwan Semiconductor
Breakdown Voltage-Max
95.5 V
Breakdown Voltage-Min
86.5 V
Breakdown Voltage-Nom
91 V
5.6 V
Clamping Voltage-Max
125 V
9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
O-XALF-W2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
2.5 W
Qualification Status
Not Qualified
Qualified
Reference Standard
UL RECOGNIZED
MIL-19500/551C
Rep Pk Reverse Voltage-Max
77.8 V
5 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Terminal Form
C BEND
WIRE
Terminal Position
DUAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
27
2
Factory Lead Time
29 Weeks
Case Connection
ISOLATED
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