P6SMB75AHM3/H
vs
P6SMB75A-M3/52
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Peak Reflow Temperature (Cel)
260
260
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
78.8 V
Breakdown Voltage-Min
71.3 V
Breakdown Voltage-Nom
75.05 V
Clamping Voltage-Max
103 V
Configuration
SINGLE
Diode Element Material
SILICON
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Rep Pk Reverse Voltage-Max
64.1 V
Reverse Current-Max
1 µA
Reverse Test Voltage
64.1 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Form
C BEND
Terminal Position
DUAL
Compare P6SMB75AHM3/H with alternatives
Compare P6SMB75A-M3/52 with alternatives