P6SMB75-T/R vs P6SMB75A-E3/52 feature comparison

P6SMB75-T/R PanJit Semiconductor

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P6SMB75A-E3/52 Vishay Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC VISHAY SEMICONDUCTORS
Part Package Code DO-214AA DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 82.5 V 78.8 V
Breakdown Voltage-Min 67.5 V 71.3 V
Breakdown Voltage-Nom 75 V 75.05 V
Clamping Voltage-Max 108 V 103 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 60.7 V 64.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 2
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 5 W
Reverse Current-Max 1 µA
Reverse Test Voltage 64.1 V
Terminal Finish Matte Tin (Sn)

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Compare P6SMB75A-E3/52 with alternatives