P6SMB33ATR13
vs
SMBJP6KE30CATR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
MICROSEMI CORP
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
34.7 V
31.5 V
Breakdown Voltage-Min
31.4 V
28.5 V
Breakdown Voltage-Nom
33 V
30 V
Clamping Voltage-Max
45.7 V
41.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
28.2 V
25.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
6
Part Package Code
DO-214AA
Package Description
PLASTIC, SMBJ, 2 PIN
Pin Count
2
Additional Feature
TR, 7 INCH: 750
JEDEC-95 Code
DO-214AA
Moisture Sensitivity Level
1
Power Dissipation-Max
1.38 W
Compare P6SMB33ATR13 with alternatives
Compare SMBJP6KE30CATR with alternatives