SMBJP6KE30CATR vs P6SMB30CA feature comparison

SMBJP6KE30CATR Microsemi Corporation

Buy Now Datasheet

P6SMB30CA Taiwan Semiconductor

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AA
Package Description PLASTIC, SMBJ, 2 PIN
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 31.5 V 31.5 V
Breakdown Voltage-Min 28.5 V 28.5 V
Breakdown Voltage-Nom 30 V 30 V
Clamping Voltage-Max 41.4 V 41.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 25.6 V 25.6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 29
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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