P6SMB200A-M3/5B
vs
P6SMB200AHM3/H
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
210 V
Breakdown Voltage-Min
190 V
Breakdown Voltage-Nom
200 V
Clamping Voltage-Max
274 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Rep Pk Reverse Voltage-Max
171 V
Reverse Current-Max
1 µA
Reverse Test Voltage
171 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Terminal Form
C BEND
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
2
1
Rohs Code
Compare P6SMB200A-M3/5B with alternatives
Compare P6SMB200AHM3/H with alternatives