P6SMB200A-M3/5B vs P6SMB200 feature comparison

P6SMB200A-M3/5B Vishay Semiconductors

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P6SMB200 Freescale Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS MOTOROLA SEMICONDUCTOR PRODUCTS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 210 V
Breakdown Voltage-Min 190 V
Breakdown Voltage-Nom 200 V 200 V
Clamping Voltage-Max 274 V 162 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 171 V 162 V
Reverse Current-Max 1 µA
Reverse Test Voltage 171 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 9
Rohs Code No

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