P6SMB170CAHR4
vs
SMBJ150CHE3/52
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
R-PDSO-C2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
|
Breakdown Voltage-Max |
179 V
|
204 V
|
Breakdown Voltage-Min |
162 V
|
167 V
|
Breakdown Voltage-Nom |
170 V
|
185.5 V
|
Clamping Voltage-Max |
234 V
|
268 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AA
|
|
JESD-30 Code |
R-PDSO-C2
|
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
3 W
|
|
Reference Standard |
AEC-Q101
|
|
Rep Pk Reverse Voltage-Max |
145 V
|
150 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
C BEND
|
|
Terminal Position |
DUAL
|
|
Base Number Matches |
1
|
2
|
|
|
|
Compare P6SMB170CAHR4 with alternatives
Compare SMBJ150CHE3/52 with alternatives