P6SMB170CAHR4 vs SMBJ150CAE3/TR feature comparison

P6SMB170CAHR4 Taiwan Semiconductor

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SMBJ150CAE3/TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH; 750
Breakdown Voltage-Max 179 V 185 V
Breakdown Voltage-Min 162 V 167 V
Breakdown Voltage-Nom 170 V 176 V
Clamping Voltage-Max 234 V 243 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1.38 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 145 V 150 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Date Of Intro 1995-01-01
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10

Compare P6SMB170CAHR4 with alternatives

Compare SMBJ150CAE3/TR with alternatives