P6SMB13A-M3/52
vs
SMBJP6KE13AE3TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
TR, 7 INCH: 750
Breakdown Voltage-Max
13.7 V
13.7 V
Breakdown Voltage-Min
12.4 V
12.4 V
Breakdown Voltage-Nom
13.05 V
Clamping Voltage-Max
18.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1.38 W
Rep Pk Reverse Voltage-Max
11.1 V
11.1 V
Reverse Current-Max
5 µA
Reverse Test Voltage
11.1 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
2
1
Rohs Code
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Compare P6SMB13A-M3/52 with alternatives
Compare SMBJP6KE13AE3TR with alternatives