P6SMB12HR4 vs SMBJ10 feature comparison

P6SMB12HR4 Taiwan Semiconductor

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SMBJ10 Transpro Electronics Corp

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TRANSPRO ELECTRONICS CORP
Package Description R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 13.2 V
Breakdown Voltage-Min 10.8 V
Breakdown Voltage-Nom 12 V 12.4 V
Clamping Voltage-Max 17.3 V 18.8 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 9.72 V 10 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 1 47

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