P6SMB12HR4 vs SMBJ10 feature comparison

P6SMB12HR4 Taiwan Semiconductor

Buy Now Datasheet

SMBJ10 Transpro Electronics Corp

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TRANSPRO ELECTRONICS CORP
Package Description R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 13.2 V
Breakdown Voltage-Min 10.8 V
Breakdown Voltage-Nom 12 V 12.4 V
Clamping Voltage-Max 17.3 V 18.8 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 9.72 V 10 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 47

Compare P6SMB12HR4 with alternatives

Compare SMBJ10 with alternatives