P6KE6.8A-G
vs
P6KE6.8-AU_R2_000A1
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
PAN JIT INTERNATIONAL INC
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
unknown
not_compliant
Breakdown Voltage-Max
7.14 V
7.48 V
Breakdown Voltage-Min
6.45 V
6.12 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
AEC-Q101; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
5.8 V
5.5 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Nom
6.8 V
Clamping Voltage-Max
10.8 V
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Terminal Finish
Tin (Sn)
Compare P6KE6.8A-G with alternatives
Compare P6KE6.8-AU_R2_000A1 with alternatives