P6KE36C vs P6KE36CA feature comparison

P6KE36C Galaxy Microelectronics

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P6KE36CA International Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD INTERNATIONAL SEMICONDUCTOR INC
Package Description PLASTIC PACKAGE-2
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN LOW IMPEDANCE
Breakdown Voltage-Max 39.6 V 37.8 V
Breakdown Voltage-Min 32.4 V 34.2 V
Breakdown Voltage-Nom 36 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 52 V 49.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -50 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 1 W
Rep Pk Reverse Voltage-Max 29.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Qualification Status Not Qualified
Reverse Current-Max 5 µA

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