P6KE110C-A
vs
P6KE110C
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
DIODES INC
MDE SEMICONDUCTOR INC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
99 V
99.45 V
Breakdown Voltage-Nom
110 V
110.5 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
158 V
152 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
65
Package Description
DO-15, 2 PIN
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max
121.55 V
JEDEC-95 Code
DO-204AC
Power Dissipation-Max
1 W
Reference Standard
MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max
94 V
Reverse Test Voltage
94 V
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