P6KE10P vs P6KE10ACOX.120 feature comparison

P6KE10P STMicroelectronics

Buy Now Datasheet

P6KE10ACOX.120 Microsemi Corporation

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer STMICROELECTRONICS NEW ENGLAND SEMICONDUCTOR
Package Description O-PALF-W2 O-MEDB-N2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 11 V
Breakdown Voltage-Min 9.5 V
Breakdown Voltage-Nom 10 V 10 V
Case Connection ISOLATED
Clamping Voltage-Max 18.6 V 14.5 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 2800 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-MEDB-N2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape ROUND ROUND
Package Style LONG FORM DISK BUTTON
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.6 V 8.55 V
Reverse Current-Max 10 µA 10 µA
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Form WIRE NO LEAD
Terminal Position AXIAL END
Base Number Matches 1 1
Operating Temperature-Min -65 °C

Compare P6KE10P with alternatives

Compare P6KE10ACOX.120 with alternatives