P6KE10-AU_R2_100A1 vs P6KE10A-GT3 feature comparison

P6KE10-AU_R2_100A1 PanJit Semiconductor

Buy Now Datasheet

P6KE10A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 11 V 10.5 V
Breakdown Voltage-Min 9 V 9.5 V
Breakdown Voltage-Nom 10 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; TS 16949; UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.1 V 8.55 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Qualification Status Not Qualified

Compare P6KE10-AU_R2_100A1 with alternatives

Compare P6KE10A-GT3 with alternatives