P6KE10A-GT3 vs P6KE10_B0_10001 feature comparison

P6KE10A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE10_B0_10001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 10.5 V 11 V
Breakdown Voltage-Min 9.5 V 9 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.55 V 8.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Pbfree Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Nom 10 V
Clamping Voltage-Max 15 V
JESD-609 Code e3
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Terminal Finish TIN

Compare P6KE10A-GT3 with alternatives

Compare P6KE10_B0_10001 with alternatives