P4KE8.2A
vs
P4KE8.2A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Max
8.61 V
Breakdown Voltage-Min
7.79 V
Breakdown Voltage-Nom
8.2 V
8.2 V
Case Connection
ISOLATED
Clamping Voltage-Max
12.1 V
12.1 V
Configuration
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
Number of Elements
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
7 V
7.02 V
Reverse Current-Max
200 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Rohs Code
Part Package Code
DO-41
JEDEC-95 Code
DO-41
Peak Reflow Temperature (Cel)
260
Compare P4KE8.2A with alternatives
Compare P4KE8.2A with alternatives