P4KE8.2A
vs
P4KE8.2A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
HY ELECTRONIC CORP
GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
8.61 V
Breakdown Voltage-Min
7.79 V
Breakdown Voltage-Nom
8.2 V
8.2 V
Case Connection
ISOLATED
Clamping Voltage-Max
12.1 V
12.1 V
Configuration
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-41
DO-41
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
Number of Elements
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
Rep Pk Reverse Voltage-Max
7.02 V
7.02 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Rohs Code
Peak Reflow Temperature (Cel)
260
Compare P4KE8.2A with alternatives
Compare P4KE8.2A with alternatives