P4KE30B0G vs P4KE30HB0 feature comparison

P4KE30B0G Taiwan Semiconductor

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P4KE30HB0 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
kg CO2e/kg 8.54 8.54
Average Weight (mg) 283 283
CO2e (mg) 2416.82 2416.82
Category CO2 Kg 8.54 8.54
Compliance Temperature Grade Military: -55C to +175C Military: -55C to +175C
EU RoHS Version RoHS 2 (2015/863/EU) RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a), 7(c)-I 7(a), 7(c)-I
Candidate List Date 2024-06-27 2024-06-27
SVHC Over MCV 7439-92-1 7439-92-1
Conflict Mineral Status DRC Conflict Free DRC Conflict Free
Conflict Mineral Status Source CMRT V6.40 CMRT V6.40
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 33 V 33 V
Breakdown Voltage-Min 27 V 27 V
Breakdown Voltage-Nom 30 V 30 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 43.5 V 43.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard UL RECOGNIZED AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 24.3 V 24.3 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Qualifications AEC-Q101

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